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IXTP IXTY2N60P
IXTY IXTP2N60P
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-252 AA (IXTY) Outline
g fs
C iss
C oss
C rss
V DS = 20V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
1.4
2.2
240
28
3.5
S
pF
pF
pF
t d(on)
t r
t d(off)
t f
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 50 Ω (External)
28
20
60
23
ns
ns
ns
ns
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
7.0
2.5
nC
nC
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q gd
R thJC
R thCS
2.1
0.50
nC
2.25 ° C /W
° C /W
A
A1
A2
b
b1
b2
2.19
0.89
0
0.64
0.76
5.21
2.38
1.14
0.13
0.89
1.14
5.46
0.086
0.035
0
0.025
0.030
0.205
0.094
0.045
0.005
0.035
0.045
0.215
c
c1
D
0.46
0.46
5.97
0.58
0.58
6.22
0.018
0.018
0.235
0.023
0.023
0.245
Source-Drain Diode
D1
E
4.32
6.35
5.21
6.73
0.170
0.250
0.205
0.265
Symbol Test Conditions
(T J = 25 ° C Unless Otherwise Specified)
I S V GS = 0V
I SM Repetitive, Pulse Width Limited by T JM
Characteristic Values
Min. Typ. Max.
2
6
A
A
E1
e
e1
H
L
L1
L2
L3
4.32 5.21
2.28 BSC
4.57 BSC
9.40 10.42
0.51 1.02
0.64 1.02
0.89 1.27
2.54 2.92
0.170 0.205
0.090 BSC
0.180 BSC
0.370 0.410
0.020 0.040
0.025 0.040
0.035 0.050
0.100 0.115
V SD
t rr
I F = I S , V GS = 0V, Note 1
I F = 2A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
400
1.5
V
ns
TO-220 (IXTP) Outline
Note 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Pins:
1 - Gate
2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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